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| SBM340 3A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERMITEa3 Features NEW PRODUCT * * * * * Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 A P 3 E G POWERMITEa3 Dim A B C Min 4.03 6.40 Max 4.09 6.61 .889 NOM 1.83 NOM 1.10 5.01 4.37 .71 .36 1.73 1.14 5.17 4.43 .77 .46 1.83 .178 NOM B J H D E G Mechanical Data * * * * * Case: POWERMITEa3, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: Type Number Weight: 0.072 grams (approx.) 1 2 M D C PIN 1 PIN 2 H J K C L PIN 3, BOTTOMSIDE HEAT SINK K L M P .178 NOM Note: Pins 1 & 2 must be electrically connected at the printed circuit board. All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See also Figure 5) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) @ TC = 100C Typical Thermal Resistance Junction to Soldering Point Operating Temperature Range Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IO IFSM RqJS Tj TSTG @ TA = 25C unless otherwise specified Symbol V(BR)R VFM Min 40 3/4 3/4 3/4 Typ 3/4 0.46 0.40 0.57 0.54 15 3/4 180 Max 3/4 0.50 0.44 0.61 0.58 500 20 3/4 Unit V V mA mA pF Test Condition IR = 0.5mA IF = 3A, Tj = 25C IF = 3A, Tj = 125C IF = 6A, Tj = 25C IF = 6A, Tj = 125C Tj = 25C, VR = 40V Tj = 100C, VR = 40V f = 1.0MHz, VR = 4.0V DC Value 40 28 3 50 3.4 -55 to +125 -55 to +150 Unit V V A A C/W C C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage (Note 1) Reverse Current (Note 1) Total Capacitance Notes: IRM CT 1. Short duration test pulse used to minimize self-heating effect. DS30362 Rev. 2 - 2 1 of 3 www.diodes.com SBM340 IF, INSTANTANEOUS FORWARD CURRENT (A) 10 TJ = +125C 10,000 TJ = +125C NEW PRODUCT 1000 TJ = +75C 100 TJ = +25C TJ = +75C 1.0 TJ = -25C 10 TJ = +25C 1 0.1 TJ = -25C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.01 0 10 20 30 40 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics 50 Single Half-Sine-Wave (JEDEC Method) 1000 f = 1 MHz TJ = 25C TC = 100C 30 CT, TOTAL CAPACITANCE (pF) 40 100 20 10 0 1 10 100 10 0.1 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current VR, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance vs. Reverse Voltage DS30362 Rev. 2 - 2 2 of 3 www.diodes.com SBM340 4 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 4 Tj = 125C 3 NOTE 2 NEW PRODUCT IF, DC FORWARD CURRENT (A) 3.5 Note 1 3 2.5 Note 2 2 1.5 1 0.5 0 25 125 75 100 50 TA, AMBIENT TEMPERATURE (C) Fig. 5 DC Forward Current Derating 150 Note 3 2 1 NOTE 3 0 0 1 2 3 4 5 6 7 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation Ordering Information Device SBM340-13 Notes: (Note 4) Packaging POWERMITEa3 Shipping 5000/Tape & Reel 1. TA = TSOLDERING POINT, RqJS = 3.4C/W, RqSA = 0C/W. 2. Device mounted on GETEK substrate, 2"x2", 2 oz. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RqJA in range of 20-40C/W. 3. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 95-115C/W. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information SBM340 YYWW SBM340 = Product type marking code = Manufacturers' code marking YYWW = Date code marking YY = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52 POWERMITE is a registered trademark of Microsemi Corporation. DS30362 Rev. 2 - 2 3 of 3 www.diodes.com SBM340 |
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